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Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

机译：不同缓冲层厚度产生的应变和穿透位错对硅上等离子体辅助mBE生长的超薄alGaN / GaN异质结构形成的影响

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Subhra Chowdhury; Dhrubes Biswas;
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1. Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon [J] . Subhra Chowdhury, Dhrubes Biswas AIP Advances . 2015,第5期

机译：缓冲层厚度变化产生的应变和螺纹位错对硅上等离子体辅助MBE生长的超薄AlGaN / GaN异质结构形成的影响
2. Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In_(0.17)Al_(0.83)N/GaN heterostructure on Si(111) [J] . Subhra Chowdhury, Dhrubes Biswas Applied Physics Letters . 2015,第8期

机译：等离子体辅助分子束外延生长以及缓冲层厚度的变化对Si（111）上超薄In_（0.17）Al_（0.83）N / GaN异质结构形成的影响
3. Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy [J] . Kaun Stephen W. Applied Physics Letters . 2012,第26期

机译：等离子体辅助分子束外延生长AlGaN / AlN / GaN异质结构的线位错密度与薄层电阻的相关性
4. Impact of GaN buffer layer thickness on structural and optical properties of AlGaN/GaN based high electron mobility transistor structure grown on Si(111) substrate by plasma assisted molecular beam epitaxy technique [C] . Ghosh Kankat, Das Sudipta, Ganguly S., 2015 Third International Conference on Computer, Communication, Control and Information Technology . 2015

机译：GaN缓冲层厚度对等离子辅助分子束外延技术在Si（111）衬底上生长的AlGaN / GaN基高电子迁移率晶体管结构的结构和光学性能的影响
5. Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs [O] . Huan-Yu Shih, Makoto Shiojiri, Ching-Hsiang Chen, -1

机译：接近无应变的GaN兼容缓冲层上GaN外延层中的超低穿线位错密度及其在异质外延LED中的应用
6. Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer [O] . Mihir Kumar Mahata, Saptarsi Ghosh, Sanjay Kumar Jana, 2014

机译：pa-mBE生长alGaN / GaN异质结构在超薄缓冲层蓝宝石上的综合应变和带隙分析
7. Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE [R] . Ruvimov, S. , Liliental-Weber, Z. , Washburn, J. , 1996

机译：化学计量学对等离子体辅助mBE生长在Gaas上立方GaN中缺陷分布的影响

Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

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